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P2103NV

Niko
Part Number P2103NV
Manufacturer Niko
Description N- & P-Channel Enhancement Mode Field Effect Transistor
Published Nov 11, 2008
Detailed Description NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2103NV SOP-8 PRODUCT SUMMARY V(BR)DSS N-Channel P-C...
Datasheet PDF File P2103NV PDF File

P2103NV
P2103NV

Overview
NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2103NV SOP-8 PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel www.
DataSheet4U.
com RDS(ON) 21mΩ 35mΩ ID 7A -6A G : GATE D : DRAIN S : SOURCE 30 -30 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.
) 1 1 SYMBOL VDS VGS N-Channel P-Channel 30 ±20 7 6 28 2 1.
3 -55 to 150 275 -30 ±20 -6 -5 -24 UNITS V V TC = 25 °C TC = 70 °C TC = 25 °C TC = 70 °C ID IDM PD Tj, Tstg TL A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 SYMBOL RθJA TYPICAL MAXIMUM 62.
5 UNITS °C / W Pulse width limited by maximum junction temperature.
Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA VGS = 0V, ID = -250µA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA VDS = VGS, ID = -250µA N-Ch P-Ch N-Ch P-Ch 30 -30 0.
8 -0.
8 1.
5 -1.
5 2.
5 -2.
5 V MIN TYP MAX UNIT 1 OCT-22-2003 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2103NV SOP-8 VDS = 0V, VGS = ±20V Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V www.
DataSheet4U.
com Zero Gate N-Ch P-Ch N-Ch P-Ch ±100 ±100 1 -1 10 -10 28 -24 21 44 14 28 8 7 32 60 nA Voltage Drain Current IDSS VDS = 20V, VGS = 0V, TJ = 55 °C N-Ch VDS = -20V, VGS = 0V, TJ = 55 °C P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch µA On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V VDS =-5V, VGS = -10V VGS = 4.
5V, ID = 6A A Drain-Source Resistance1 On-State VGS = -4.
5V, ID = -5A RDS(ON) VGS = 10V, ID = 7A VGS = -10V, ID = -6A mΩ 21 35 Forward Transconductance1 gfs VDS = 10V, ID = 5A VDS = -10V, ID = -5A S DYNAMIC Input Capacitance Output Ca...


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