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P5504EVG

UNIKC
Part Number P5504EVG
Manufacturer UNIKC
Description P-Channel MOSFET
Published Feb 3, 2017
Detailed Description P5504EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 55mΩ @VGS = -10V ID -6A SOP- 08 ...
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P5504EVG
P5504EVG

Overview
P5504EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 55mΩ @VGS = -10V ID -6A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -6 -4.
8 -20 Power Dissipation TA = 25 °C TA = 70 °C PD 3.
1 2 Operating Junction & Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.
) TJ, TSTG TL -55 to 150 275 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Lead Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
2Duty cycle  1% SYMBOL RqJL RqJA TYPICAL MAXIMUM 25 40 UNITS °C / W Ver 1.
0 1 2012/4/16 P5504EVG P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Sou...


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