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P5504EDG

Niko-Sem
Part Number P5504EDG
Manufacturer Niko-Sem
Description P-Channel Logic Level Enhancement
Published Dec 30, 2010
Detailed Description NIKO-SEM P-Channel Enhancement Mode Field Effect Transistor P5504EDG TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMA...
Datasheet PDF File P5504EDG PDF File

P5504EDG
P5504EDG

Overview
NIKO-SEM P-Channel Enhancement Mode Field Effect Transistor P5504EDG TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS -40V RDS(ON) 55mΩ ID -21A G S 1.
GATE 2.
DRAIN 3.
SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation 1 SYMBOL VDS VGS LIMITS -40 ±20 -21 -13 -39 41 16 -55 to 150 UNITS V V TC = 25 °C TC = 100 °C ID IDM A TC = 25 °C TC = 100 °C PD Tj, Tstg W °C Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 SYMBOL RθJC RθJA TYPICAL MAXIMUM 3 75 UNITS °C / W °C / W Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 LIMITS UNIT MIN TYP MAX V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V VDS = -32V, VGS = 0V VDS = -30V, VGS = 0V, TJ = 125 °C VDS = -5V, VGS = -10V -40 -1.
5 -2 -3 V ±250 nA 1 10 µA A -96 REV1.
0 1 www.
DataSheet.
in Oct-12-2010 NIKO-SEM P-Channel Enhancement Mode Field Effect Transistor P5504EDG TO-252 Halogen-Free & Lead-Free Drain-Source On-State 1 Resistance Forward Transconductance 1 RDS(ON) gfs VGS = -4.
5V, ID = -6A VGS = -10V, ID = -8A VDS = -10V, ID = -8A DYNAMIC 65 38 11 94 55 mΩ S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 2 2 Ciss Coss Crss Qg Qgs Qgd 2 833 VGS = 0V, VDS = -10V, f = 1MHz 198 138 18 VDS = 0.
5V(BR)DSS, VGS = -10V, ID = -8A 3.
3 6.
8 6.
7 VDS = -20V, ID ≅ -1A, VGS = -10V, RGS = 6Ω 9.
7 19.
8 12.
3 13.
4 19.
4 35.
6 22.
2 nS nC pF Gate-Source Charge Gate-Drain Charge 2 2 Turn-On Delay Time Rise Time td(on) tr Turn-Off Delay Time Fall Time...


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