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PA110BV

UNIKC
Part Number PA110BV
Manufacturer UNIKC
Description N-Channel MOSFET
Published Feb 3, 2017
Detailed Description PA110BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 110mΩ @VGS = 10V ID 3.2A SOP-8 A...
Datasheet PDF File PA110BV PDF File

PA110BV
PA110BV

Overview
PA110BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 110mΩ @VGS = 10V ID 3.
2A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 3.
2 2.
5 10 Avalanche Current IAS 25 Avalanche Energy L =0.
1mH EAS 31 Power Dissipation TA = 25 °C TA = 70 °C PD 2.
5 1.
6 Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA TYPICAL MAXIMUM UNITS 50 °C / W REV 1.
0 1 2013-11-25 PA110BV N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMIT UNITS MSIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Thresh...


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