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PA110BL

UNIKC
Part Number PA110BL
Manufacturer UNIKC
Description MOSFET
Published Feb 6, 2017
Detailed Description PA110BL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 110mΩ @VGS = 10V ID 3A SOT- 223 ...
Datasheet PDF File PA110BL PDF File

PA110BL
PA110BL

Overview
PA110BL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 110mΩ @VGS = 10V ID 3A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 TC = 25 °C 6 Continuous Drain Current TA = 25 °C ID 3.
2 Pulsed Drain Current1 TA = 100 °C IDM 2 15 Avalanche Current IAS 6.
6 Avalanche Energy L = 0.
1mH EAS 2.
2 Power Dissipation TA = 25 °C TA = 100 °C PD 2.
5 1 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 50 Junction-to-Case RqJC 14 1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C.
UNITS °C / W REV 1.
0 1 2014/6/27 PA110BL N-Channel Enhancement Mode MOSFET ELECTRICAL ...


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