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P2003BEAA

UNIKC
Part Number P2003BEAA
Manufacturer UNIKC
Description MOSFET
Published Feb 4, 2017
Detailed Description P2003BEAA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 20mΩ @VGS = 10V ID 25A PDFN 3X3P ...
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P2003BEAA
P2003BEAA

Overview
P2003BEAA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 20mΩ @VGS = 10V ID 25A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Tc = 25 °C 25 Continuous Drain Current Tc = 100 °C TA = 25 °C ID 16 8 Pulsed Drain Current1 TA= 70 °C IDM 6 60 Avalanche Current IAS 17 Avalanche Energy L =0.
1mH EAS 15 TC = 25 °C 20 Power Dissipation TC = 100 °C TA = 25 °C PD 8 2 TA = 70 °C 1.
3 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Steady-State Junction-to-Case Steady-State 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA RqJC TYPICAL MAXIMUM 60 6 UNITS °C / W REV 1.
0 1 2014/7/30 P2003BEAA N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Ot...


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