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P2003BEA

UNIKC
Part Number P2003BEA
Manufacturer UNIKC
Description MOSFET
Published Feb 3, 2017
Detailed Description P2003BEA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 20mΩ @VGS = 10V ID 10A PDFN 3x3S ...
Datasheet PDF File P2003BEA PDF File

P2003BEA
P2003BEA

Overview
P2003BEA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 20mΩ @VGS = 10V ID 10A PDFN 3x3S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage Gate-Source Voltage TC = 25 °C VDS VGS 30 ±20 28 Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy TC = 100 °C TA = 25 °C TA = 70 °C L = 0.
1mH TC = 25 °C ID IDM IAS EAS 18 10 8 70 21.
5 23 25 Power Dissipation TC = 100 °C TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD TJ, TSTG 10 3.
125 2 -55 to 150 UNITS V A mJ W °C REV 1.
1 1 2014/8/5 P2003BEA N-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient t ≦10s Junction-to-Ambient Steady-State Junction-to-Case Steady-State 1Pulse width limited by maximum junction temperature.
SYMBOL RqJA RqJA RqJC TYPICAL MAXIMUM UNITS 40 75 °C / W 5 ELECTRICAL CHARACTERISTICS...


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