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P1203EEA

UNIKC
Part Number P1203EEA
Manufacturer UNIKC
Description MOSFET
Published Feb 4, 2017
Detailed Description P1203EEA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 12mΩ @VGS = -10V ID -...
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P1203EEA
P1203EEA


Overview
P1203EEA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 12mΩ @VGS = -10V ID -40A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±25 TC = 25 °C -40 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current TC = 100 °C TA = 25 °C TA = 70 °C ID IDM IAS -25 -11 -9 -95 45 Avalanche Energy L = 0.
1mH EAS 101 TC = 25 °C 31 Power Dissipation TC = 100 °C TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD TJ, TSTG 12 2.
2 1.
4 -55 to 150 UNITS V A mJ W °C REV1.
2 1 2015/8/14 P1203EEA P-Channel Logic Level Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient3 Steady-State Junction-to-Ambient Steady-State 1Pulse width limited by maximum junction temperature.
RqJA RqJC 55 °C / W 4 2Package limitatio...


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