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P1203ED

UNIKC
Part Number P1203ED
Manufacturer UNIKC
Description P-Channel MOSFET
Published Feb 6, 2017
Detailed Description P1203ED P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 12mΩ @VGS = -10V ID -52A TO-252 ...
Datasheet PDF File P1203ED PDF File

P1203ED
P1203ED

Overview
P1203ED P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 12mΩ @VGS = -10V ID -52A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -52 -33 -150 Avalanche Current Avalanche Energy2 L = 0.
1mH IAS EAS -44 97 Power Dissipation TC = 25 °C TC = 100 °C PD 49 19 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
2VDD=-15V.
Starting TJ=25°C SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.
55 50 UNITS °C / W Ver 1.
1 1 2013-3-19 P1203ED P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX S...


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