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P1003BK

UNIKC
Part Number P1003BK
Manufacturer UNIKC
Description MOSFET
Published Feb 4, 2017
Detailed Description P1003BK N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 10.5mΩ @VGS = 10V ID 49A PDFN 5*6P ...
Datasheet PDF File P1003BK PDF File

P1003BK
P1003BK

Overview
P1003BK N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 10.
5mΩ @VGS = 10V ID 49A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current TC = 25 °C (Package Limited) TC = 25 °C(Silicon Limited) ID 30 49 Pulsed Drain Current1 TC = 100 °C 31 IDM 120 Continuous Drain Current TA = 25 °C TA = 70 °C 13 ID 10 Avalanche Current IAS 28 Avalanche Energy L = 0.
1mH EAS 40 Power Dissipation TC = 25 °C TC = 100 °C 35 PD 14 Power Dissipation TA = 25 °C TA = 70 °C 2.
5 PD 1.
6 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Steady-State Junction-to-Ambient Steady-State 1Pulse width limited by maximum junction temperature.
SYMBOL RqJC RqJA TYPICAL MAXIMUM UNITS 3.
5 °C / W 50 Ver 1.
0 1 ...


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