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P0804BD

Part Number	P0804BD
Manufacturer	UNIKC
Description	MOSFET
Published	Feb 6, 2017
Detailed Description	P0804BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 8.5mΩ @VGS = 10V ID 50A TO-252 ABS...
Datasheet	P0804BD PDF File

Overview

P0804BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 8.
5mΩ @VGS = 10V ID 50A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 50 35 100 Power Dissipation TC = 25 °C TC = 100 °C PD 50 30 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
2Duty cycle≤1% SYMBOL RqJC RqJA TYPICAL MAXIMU...

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