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P0804BD8

Part Number	P0804BD8
Manufacturer	UNIKC
Description	MOSFET
Published	Feb 6, 2017
Detailed Description	P0804BD8 N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 8mΩ @VGS = 10V ID 62A TO-252 ABSO...
Datasheet	P0804BD8 PDF File

Overview

P0804BD8 N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 8mΩ @VGS = 10V ID 62A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 62 39 160 Avalanche Current Avalanche Energy2 L = 0.
1mH IAS EAS 52 137 Power Dissipation TC = 25 °C TC = 100 °C PD 50 20 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction tempe...

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