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RSD175N10

ROHM
Part Number RSD175N10
Manufacturer ROHM
Description MOSFET
Published Feb 10, 2017
Detailed Description Data Sheet 4V Drive Nch MOSFET RSD175N10  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 4) 4V dri...
Datasheet PDF File RSD175N10 PDF File

RSD175N10
RSD175N10

Overview
Data Sheet 4V Drive Nch MOSFET RSD175N10  Structure Silicon N-channel MOSFET Features 1) Low on-resistance.
4) 4V drive.
4) High power package.
 Application Switching  Dimensions (Unit : mm) CPT3 (SC-63) 6.
5 5.
1 2.
3 0.
5 0.
9 5.
5 1.
5 0.
75 0.
9 2.
3 (1) (2) 0.
65 (3) 2.
3 0.
8Min.
2.
5 0.
5 1.
0 1.
5 9.
5  Packaging specifications Package Type Code Basic ordering unit (pieces) RSD175N10 Taping TL 2500   Inner circuit ∗1 ∗2  Absolute maximum ratings (Ta = 25C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Continuous Pulsed Continuous Pulsed VDSS VGSS ID *3 IDP *1 IS *3 ISP *1 PD *2 Tch Range of storage temperature Tstg Limits 100 20 17.
5 35 17.
5 35 20 150 55 to 150 *1 PW10s, Duty cycle1% *2 TC=25°C *3 Please use within the range of SOA.
Unit V V A A A A W C C  Thermal resistance Parameter Channel to Case * T...


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