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GT50N324

Toshiba
Part Number GT50N324
Manufacturer Toshiba
Description silicon N-channel IGBT
Published Feb 12, 2017
Detailed Description Discrete IGBTs Silicon N-Channel IGBT GT50N324 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applic...
Datasheet PDF File GT50N324 PDF File

GT50N324
GT50N324

Overview
Discrete IGBTs Silicon N-Channel IGBT GT50N324 1.
Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other application.
2.
Features (1) Sixth generation (2) Enhancement mode (3) High-speed switching: IGBT tf = 0.
11 µs (typ.
) (IC = 60 A) FRD trr = 0.
8 µs (typ.
) (di/dt = -20 A/µs) (4) Low saturation voltage: VCE(sat) = 1.
9 V (typ.
) (IC = 60 A) (5) FRD included between emitter and collector 3.
Packaging and Internal Circuit GT50N324 TO-3P(N) 1: Gate 2: Collector 3: Emitter ©2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2008-03 2019-11-18 Rev.
2.
0 GT50N324 4.
...


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