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RBQ10T65ANZ

ROHM
Part Number RBQ10T65ANZ
Manufacturer ROHM
Description Schottky Barrier Diode
Published Apr 3, 2017
Detailed Description Schottky Barrier Diode RBQ10T65ANZ Applications Switching power supply Dimensions (Unit : mm) Features 1) Power mo...
Datasheet PDF File RBQ10T65ANZ PDF File

RBQ10T65ANZ
RBQ10T65ANZ


Overview
Schottky Barrier Diode RBQ10T65ANZ Applications Switching power supply Dimensions (Unit : mm) Features 1) Power mold type (TO-220FN) 2) Cathode common dual type 3) High reliability 4) Low IR φ3.
2±0.
2 ① Datasheet Structure (1) (2) (3) Anode Cathode Anode Construction Silicon epitaxial planar type ROHM : : TO-220FN ① : Manufacture date Packing Dimensions (Unit : mm) 7 540 34.
5 Absolute Maximum Ratings (Tc= 25°C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average forward rectified current Non-repetitive forward current surge peak Operating junction temperature Storage temperature VRM VR Io IFSM Tj Tstg Conditions Duty≦0.
5 Direct Reverse Voltage 60Hz half sin wave, resistive load, IO/2 per diode, Tc= 130°C Max.
60Hz half sin wave, Non-repetitive at Ta=25°C, 1cycle, per diode - - Limits Unit 65 V 65 V 10 A 50 A 150 °C 55 to 150 °C Electrical and Thermal Characteristics (Tj= 25°C) Parameter Symbol Conditions Forward voltage Reverse current Thermal resistance VF IR1 IR2 Rth(j-c) IF=5A VR=60V VR=65V Junction to case Min.
Typ.
Max.
Unit - 0.
63 0.
69 V - 5 40 μA - 10 70 μA - - 2 °C/W www.
rohm.
com © 2016 ROHM Co.
, Ltd.
All rights reserved.
1/4 2017.
08 - Rev.
B RBQ10T65ANZ Electrical Characteristic Curves Datasheet FORWARD CURRENT : IF(A) 100 Tj = 150°C 10 Tj = 125°C 1 Tj = 75°C 0.
1 Tj = 25°C 0.
01 0 Tj = 25°C 200 400 600 800 1000 1200 1400 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS REVERSE CURRENT : IR(μA) 100000 10000 Tj = 150°C Tj = 125°C 1000 100 Tj = 75°C 10 Tj = 25°C 1 0.
1 Tj = 25°C 0.
01 0.
001 0 5 10 15 20 25 30 35 40 45 50 55 60 65 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS PEAK SURGE FORWARD CURRENT : IFSM(A) CAPACITANCE BETWEEN TERMINALS : Ct(pF) 1000 100 Tj = 25°C f = 1MHz 1000 100 IFSM 8m.
3s 8m.
3s 1cyc Ta=25°C 10 0 10 20 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 30 10 1 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS www.
rohm.
com © 2016 ROHM Co.
, Ltd.
All rights rese...



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