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RBQ10T65A

Rohm
Part Number RBQ10T65A
Manufacturer Rohm
Description Schottky Barrier Diode
Published Apr 3, 2012
Detailed Description 5.0±0.2NotNeRewcDoemsimgennsded for 8.0±0.2 Schottky Barrier Diode RBQ10T65A Application General rectification Featu...
Datasheet PDF File RBQ10T65A PDF File

RBQ10T65A
RBQ10T65A

Overview
5.
0±0.
2NotNeRewcDoemsimgennsded for 8.
0±0.
2 Schottky Barrier Diode RBQ10T65A Application General rectification Features 1) Cathode common type.
2) Low IR 3) High reliability Construction Silicon epitaxial planar Dimensions (Unit : mm) 4.
5±00.
.
31 10.
0±00.
.
31 φ3.
2±0.
2 2.
8±00.
.
21 0.
4 0.
2 15.
0± 12.
0±0.
2 ① 1.
2 1.
3 0.
8 2.
45±0.
5 2.
45±0.
5 (1) (2) (3) 14.
0±0.
5 2.
6±0.
5 0.
75±00.
.
015 ROHM : TO220FN ① : Manufacture date Datasheet Structure (1) (2) (3) Anode Cathode Anode Absolute maximum ratings (Tc= 25°C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current (*1) VRM VR Io Forward current surge peak (60Hz・1cyc) Junction temperature IFSM Tj Storage temperature Tstg (*1) Rating of per diode : Io/2 Limits 65 65 10 50 150 40 to 150 Unit V V A A °C °C Electrical characteristics (Tj = 25°C) Parameter Forward voltage Reverse current Symbol Min.
VF IR - Typ.
Max.
- 0.
69 - 150 Unit Conditions V IF=5A A VR=65V www.
rohm.
c...


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