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CEM3109

CET
Part Number CEM3109
Manufacturer CET
Description Dual MOSFET
Published Apr 10, 2017
Detailed Description CEM3109 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY FEATURES 30V, 10A, RDS(ON) = 14mΩ ...
Datasheet PDF File CEM3109 PDF File

CEM3109
CEM3109

Overview
CEM3109 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY FEATURES 30V, 10A, RDS(ON) = 14mΩ @VGS = 10V.
RDS(ON) = 20mΩ @VGS = 4.
5V.
-30V, -8A, RDS(ON) = 20mΩ @VGS = -10V.
RDS(ON) = 30mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8 1 D1 D1 D2 D2 876 5 123 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Channel 1 Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Current-Continuous Drain Current-Pulsed a ID 10 IDM 40 Channel 2 -30 ±20 -8 32 Maximum Power Dissipation PD 2.
0 Operating and Store Temperature Range TJ,Tstg -55 to 150 Units V V A A W C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.
5 Units C/W This is preliminary information on a new product in development now .
Details are subject to change...


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