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CEM3138

CET
Part Number CEM3138
Manufacturer CET
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Published May 6, 2007
Detailed Description Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 9.1A, RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 21mΩ @V...
Datasheet PDF File CEM3138 PDF File

CEM3138
CEM3138

Overview
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 9.
1A, RDS(ON) = 15mΩ @VGS = 10V.
RDS(ON) = 21mΩ @VGS = 4.
5V.
30V, 6.
9A, RDS(ON) = 26mΩ @VGS = 10V.
RDS(ON) = 35mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8 1 1 S1 2 G1 D1 8 D1 7 CEM3138 5 D2 6 D2 5 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Channel 1 30 Channel 2 30 Units V V A A W C ±20 9.
1 36.
4 2.
0 -55 to 150 ±20 6.
9 27.
6 Maximum ...


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