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TSI8N60M

Truesemi
Part Number TSI8N60M
Manufacturer Truesemi
Description N-Channel MOSFET
Published Apr 12, 2017
Detailed Description TSB8N60M / TSI8N60M TSB8N60M / TSI8N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using ...
Datasheet PDF File TSI8N60M PDF File

TSI8N60M
TSI8N60M

Overview
TSB8N60M / TSI8N60M TSB8N60M / TSI8N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
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D Features - 7.
5A, 600V, RDS(on) = 1.
2Ω@VGS = 10 V - Low gate charge ( typical 29nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Sin...


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