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TSI8N65M

Truesemi
Part Number TSI8N65M
Manufacturer Truesemi
Description N-Channel MOSFET
Published Apr 12, 2017
Detailed Description TSB8N65M / TSI8N65M 650V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced p...
Datasheet PDF File TSI8N65M PDF File

TSI8N65M
TSI8N65M

Overview
TSB8N65M / TSI8N65M 650V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features • 7.
5A, 650V, RDS(on) = 1.
60 @VGS = 10 V • Low gate charge ( typical 29nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2...


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