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TSF830M

Truesemi
Part Number TSF830M
Manufacturer Truesemi
Description N-Channel MOSFET
Published Apr 12, 2017
Detailed Description TSP830M/TSF830M TSP830M/TSF830M 500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi...
Datasheet PDF File TSF830M PDF File

TSF830M
TSF830M

Overview
TSP830M/TSF830M TSP830M/TSF830M 500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features • 5.
0A,500V,Max.
RDS(on)=1.
50 Ω @ VGS =10V • Low gate charge(typical 20nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (N...


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