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TSF830MR

Truesemi
Part Number TSF830MR
Manufacturer Truesemi
Description N-Channel MOSFET
Published Apr 12, 2017
Detailed Description TSF830MR TSF830MR 500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced pl...
Datasheet PDF File TSF830MR PDF File

TSF830MR
TSF830MR

Overview
TSF830MR TSF830MR 500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features • 4.
5A,500V,Max.
RDS(on)=1.
6 Ω @ VGS =10V • Low gate charge(typical 12nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR IAR PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Repetitive Avalanche...


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