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WNM01N10

WillSEMI
Part Number WNM01N10
Manufacturer WillSEMI
Description MOSFET
Published May 1, 2017
Detailed Description WNM01N10 Single N-Channel, 100V, 1.7A, Power MOSFET VDS (V) 100 Typical Rds(on) (Ω) 0.235@ VGS=10V 0.255@ VGS=4.5V D...
Datasheet PDF File WNM01N10 PDF File

WNM01N10
WNM01N10

Overview
WNM01N10 Single N-Channel, 100V, 1.
7A, Power MOSFET VDS (V) 100 Typical Rds(on) (Ω) 0.
235@ VGS=10V 0.
255@ VGS=4.
5V Descriptions The WNM01N10 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNM01N10 is Pb-free and Halogen-free.
WNM01N10 Http://www.
sh-willsemi.
com D S G SOT-23 D 3 12 GS Pin configuration (Top view) Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Small package SOT-23 Applications  Driver for Relay, Soleno...


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