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WNM01N11

WillSEMI
Part Number WNM01N11
Manufacturer WillSEMI
Description MOSFET
Published May 1, 2017
Detailed Description WNM01N11 Single N-Channel, 110V, 1.8A, Power MOSFET VDS (V) 110 Typical Rds(on) (Ω) 0.230@ VGS=10V 0.250@ VGS=4.5V W...
Datasheet PDF File WNM01N11 PDF File

WNM01N11
WNM01N11

Overview
WNM01N11 Single N-Channel, 110V, 1.
8A, Power MOSFET VDS (V) 110 Typical Rds(on) (Ω) 0.
230@ VGS=10V 0.
250@ VGS=4.
5V WNM01N11 Http://www.
sh-willsemi.
com Descriptions The WNM01N11 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNM01N11 is Pb-free and Halogen-free.
SOT-23-6L DDS 65 4 123 DDG Pin configuration (Top view) Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Small package SOT-23-6L Applications  Driver for Relay...


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