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2N5401

Part Number	2N5401
Manufacturer	KEC
Description	EPITAXIAL PLANAR PNP TRANSISTOR
Published	May 16, 2017
Detailed Description	SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Vo...
Datasheet	2N5401 PDF File

Overview

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V Low Leakage Current.
: ICBO=-50nA(Max.
) @VCB=-120V Low Saturation Voltage : VCE(sat)=-0.
5V(Max.
) @IC=-50mA, IB=-5mA Low Noise : NF=8dB (Max.
) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Ta=25 ) Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC PC Tj Tstg RATING -160 -150 -5 -600 -100 625 1.
5 150 -55 150 UNIT V V V mA mA mW W L M C 2N5401 EPITAXIAL PLA...

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