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2N5157

Part Number	2N5157
Manufacturer	Microsemi
Description	NPN HIGH POWER SILICON TRANSISTOR
Published	May 16, 2017
Detailed Description	TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/371 Devices 2N3902 2N5157 Qualified Lev...
Datasheet	2N5157 PDF File

Overview

TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/371 Devices 2N3902 2N5157 Qualified Level JAN JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Base Current Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +750C (2) Operating & Storage Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 29 mW/0C for TA > +250C 2) Derate linearly 0.
8 W/0C for TC > +750C Symbol VCEO VEBO VCBO IB IC PT Tj, Tstg Symbol RθJC ELECTRICAL CHARACTERISTICS Characteristics OFF CHARACTERISTICS Collector-Emitter Cutoff Current VCE = 325 Vdc 2N3...

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