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2N4912

Part Number	2N4912
Manufacturer	TT
Description	SILICON EPITAXIAL NPN TRANSISTOR
Published	May 17, 2017
Detailed Description	SILICON EPITAXIAL NPN TRANSISTOR 2N4912 • Low Saturation Voltage Transistor In A Hermetic Metal Package • Designed For ...
Datasheet	2N4912 PDF File

Overview

...Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector - Base Voltage 80V VCEO Collector - Emitter Voltage 80V VEBO Emitter – Base Voltage 5V IC Continuous Collector Current 1.
0A IB Base Current 1.
0A PD Total Power Dissipation at Tc = 25°C 25W Derate Above 25°C 0.
143W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min.
Typ.
Max.
Units 7 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimension...

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