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2N697

Motorola
Part Number 2N697
Manufacturer Motorola
Description GENERAL PURPOSE TRANSISTOR
Published Jun 6, 2017
Detailed Description 2N697 CASE 79, STYLE 1 TO-39 (TO-205AD) GENERAL PURPOSE TRANSISTOR NPN SILICON Refer to 2N2218 for graphs. MAXIMUM RAT...
Datasheet PDF File 2N697 PDF File

2N697
2N697

Overview
2N697 CASE 79, STYLE 1 TO-39 (TO-205AD) GENERAL PURPOSE TRANSISTOR NPN SILICON Refer to 2N2218 for graphs.
MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage =Total Device Dissipation (a TA 25°C Derate above 25°C Total Device Dissipation (a Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCER v CBO Vebo PD Pd TJ< Tstg Value 40 60 5.
0 0.
6 4.
0 2.
0 13.
3 - 65 to + 200 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.
OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltaged) dc = 100 mAdc, Rbe = 10 ohms) Collector-Base Breakdown Voltage dC = 100 /xAdc, l£ = 0) Emitter-Base Breakdown Voltage (IE = 100 ^Adc, lc = 0) Collector Cutoff Current (V C B = 30 Vdc, Ie = 0) (VC B = 30 Vdc, El = 0, TA = 150°C) ON CHARACTERISTICS DC Current Gain(1) dC = 150 mAdc, Vce = 10 Vdc) Collector-Emitter Saturation Voltaged) dC = 150 mAdc, Ib = 15 mAdc) Base-Emitter Saturation Voltaged) dC = ...


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