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2N699

Motorola
Part Number 2N699
Manufacturer Motorola
Description NPN silicon annular transistor
Published Jun 6, 2017
Detailed Description MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation (5...
Datasheet PDF File 2N699 PDF File

2N699
2N699

Overview
MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation (5 Ta = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Temperature Temperature Range Symbol VCER VCBO Vebo PD PD Tj, Tstg Value 80 120 5.
0 0.
6 4.
0 2.
0 13.
3 -65 to +200 Unit Vdc Vdc Vdc Watt mW/°C Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol R&jc R&JA Max 75 250 Unit °C/W °c/w ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.
) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (1) dC = 100 mAdc, Rbe = 10 ohms) Collector Cutoff Current (V CB = 60 Vdc, l£ = 0) (Vcb = 60 Vdc, Ie = 0, Ta = 150°C) Emitter Cutoff Current (V E B = 2.
0 VdcJc = 0) ON CHARACTERISTICS DC Current Gain (1) dC = 150 mAdc, Vqe = 10 Vdc) Collector-Emitter Saturation Voltage (1) dC = 150 mAdc, Ib = 15 mAdc) Base-...


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