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2N2906

Part Number	2N2906
Manufacturer	TT
Description	SILICON PLANAR EPITAXIAL PNP TRANSISTOR
Published	Jun 23, 2017
Detailed Description	SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2906 • Low Power • Hermetic TO-18 Metal package. • Ideally suited for High Sp...
Datasheet	2N2906 PDF File

Overview

SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2906 • Low Power • Hermetic TO-18 Metal package.
• Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage -60V VCEO Collector – Emitter Voltage -40V VEBO Emitter – Base Voltage -5V IC Continuous Collector Current -600mA PD Total Power Dissipation at TA = 25°C 400mW Derate Above 25°C 2.
3mW/°C PD Total Power Dissipation at TC = 25°C 1.
8W Derate Above 25°C 10.
3mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient RθJC Thermal Resistance, Junction To Case Min.
Typ.
Max.
Units 437.
5 °C/W 97.
2 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furni...

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