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2N6666

Inchange Semiconductor
Part Number 2N6666
Manufacturer Inchange Semiconductor
Description Silicon PNP Darlington Power Transistor
Published Jun 29, 2017
Detailed Description INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification 2N6666 DESCRIPTION ·High ...
Datasheet PDF File 2N6666 PDF File

2N6666
2N6666


Overview
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification 2N6666 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.
0V(Max)@ IC= -3A ·Complement to Type 2N6386 APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -15 A IBB Base Current-DC Collector Power Dissipation PC TC=25℃ Collector Power Dissipation Ta=25℃ Tj Junction Temperature Tstg Storage Temperature Range -250 65 2 150 -65~150 mA W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case 1.
92 ℃/W Th...


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