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2N4071


Part Number 2N4071
Manufacturer SSDI
Title NPN Transistor
Description 10 AMP NPN(continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specif...
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2N4070 : ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A PC Collector Power Dissipation@TC=25℃ 65 W TJ Operating Temperature Range -65~+150 ℃ Tstg Storage Junction Temperature Range -65~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,J.

2N4070 : 10 AMP NPN(continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx *TC=100°C (W) Package 2N1904 10 100 20 60 Note 1 1 Note 1 Note 1 125 TO-61 2N4070 10 100 40 120 5 0.6 5 20 65* TO-3 2N5048 10 100 15 60 Note 1 2 Note 1 Note 1 100 TO-61 2N5288 10 100 30 90 5 0.9 5 30 116 TO-61/I 2N5289 10 100 70 200 5 0.9 5 40 116 TO-61/I 2N5315 10 100 30 90 10 1.5 10 30 50* TO-61 2N5319 10 100 30 90 5 0.6 5 30 50* TO-61/I 2N5628 10 100 30 90 5 0.9 5 30 116 TO-3 2N5632 10 100 25 100 Note 1 1 Note 1 Note 1 .

2N4072 : 2N4072 (SILICON) 2N4073 NPN silicon annular transistors designed as amplifiers and drivers for large-signal VHF and UHF applications_ CASE 22 (TO-18) 2N4072 CASE 31 (TO-5) 2N4073 Collector connected to case MAXIMUM RATINGS Rating Collector -Emitter Voltage Collector-Base Voltage . Emitter-Base Voltage Collector Current-Continuous Total Device Dissipation @ TA =25°C Derate Above 25°C Total Device Dissipation @TC =25°C Derate above 25°C Operating Junction and Storage Temperature Range Symbol VCEO VCB VEB IC PD PD TJ , Tstg 2N4072 2N4073 20 40 4.0 100 150 0.35 - 2.0 - - 1.5 - 8.57 -65 to +200 ELECTRICAL CHARACTERISTICS (TA = 250 Cunless otherwise noted I Characteristic I ISymbol Min Ty.

2N4073 : 2N4072 (SILICON) 2N4073 NPN silicon annular transistors designed as amplifiers and drivers for large-signal VHF and UHF applications_ CASE 22 (TO-18) 2N4072 CASE 31 (TO-5) 2N4073 Collector connected to case MAXIMUM RATINGS Rating Collector -Emitter Voltage Collector-Base Voltage . Emitter-Base Voltage Collector Current-Continuous Total Device Dissipation @ TA =25°C Derate Above 25°C Total Device Dissipation @TC =25°C Derate above 25°C Operating Junction and Storage Temperature Range Symbol VCEO VCB VEB IC PD PD TJ , Tstg 2N4072 2N4073 20 40 4.0 100 150 0.35 - 2.0 - - 1.5 - 8.57 -65 to +200 ELECTRICAL CHARACTERISTICS (TA = 250 Cunless otherwise noted I Characteristic I ISymbol Min Ty.




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