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2N40

Unisonic Technologies
Part Number 2N40
Manufacturer Unisonic Technologies
Description N-Channel Power MOSFET
Published Feb 17, 2016
Detailed Description 2N40 UNISONIC TECHNOLOGIES CO., LTD Preliminary 2A, 400V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N40 is an N-ch...
Datasheet PDF File 2N40 PDF File

2N40
2N40

Overview
2N40 UNISONIC TECHNOLOGIES CO.
, LTD Preliminary 2A, 400V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, stable off–state characteristics and superior switching performance.
It also can withstand high energy pulse in the avalanche.
The UTC 2N40 is usually used in general purpose switching applications, motor control circuits and switched mode power supply.
„ FEATURES * High switching speed * RDS(ON)=3.
4Ω @ VGS=10V * 100% avalanche tested „ SYMBOL 2.
Drain Power MOSFET 1.
Gate 3.
Source „ ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 2N40L-TA3-T 2N40G-TA3-T Pin Assignment: G: Gate D: Drain S: Source Package TO-220 Pin Assignment 123 GD S Packing Tube www.
unisonic.
com.
tw Copyright © 2011 Unisonic Technologies Co.
, Ltd 1 of 5 QW-R502-524.
b 2N40 Preliminary Power MOSFET „ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 400 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous Pulsed ID IDM 2A 7A Avalanche Current Single Pulsed Avalanche Energy IAR EAS 2.
5 A 100 mJ Power Dissipation Linear Derating Factor PD △PD/△Tmb 25 0.
2 W W/°C Junction Temperature Storage Temperature TJ TSTG 150 -55 ~ 150 °C °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62.
5 5 UNIT °C/W °C/W „ ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate- Source Leakage Current Forward Reverse BVDSS ID=250µA, VGS=0V △BVDSS/△...


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