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AO3409

HOTTECH
Part Number AO3409
Manufacturer HOTTECH
Description P-Channel MOSFET
Published Jul 10, 2017
Detailed Description Plastic-Encapsulate Mosfets FEATURES The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low ga...
Datasheet PDF File AO3409 PDF File

AO3409
AO3409

Overview
Plastic-Encapsulate Mosfets FEATURES The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
D G S AO3409 P-Channel MOSFET 1.
Gate 2.
Source 3.
Drain SOT-23 Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25°C T =70°C Pulsed Drain Current C Power Dissipation B TA=25°C TA=70°C Junction and Storage Temperature Range VDS VGS ID IDM PD TJ, TSTG Maximum -30 ±20 -2.
6 -2.
2 -20 1.
4 1 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Am...


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