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2SD596

WEJ
Part Number 2SD596
Manufacturer WEJ
Description NPN Transistor
Published Jul 17, 2017
Detailed Description RoHS 2SD596 2SD596 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.2 Collector current ICM: 0.7 Collector-base...
Datasheet PDF File 2SD596 PDF File

2SD596
2SD596

Overview
RoHS 2SD596 2SD596 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.
2 Collector current ICM: 0.
7 Collector-base voltage V(BR)CBO: 30 W (Tamb=25℃) A V SOT-23-3L 1.
9 0.
95¡ À0.
025 1.
02 TD1.
BASE .
,L2.
EMITTER CO3.
COLLECTOR 2.
80¡ À0.
05 1.
60¡ À0.
05 0.
35 2.
92¡ À0.
05 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) NParameter OCollector-base breakdown voltage Collector-emitter breakdown voltage REmitter-base breakdown voltage TCollector cut-off current CEmitter cut-off current ELEDC current gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1)* hFE(2)* Test conditions Ic=100µA, IE=0 Ic= 1 mA, IB=0 IE= 100µA, IC=0 VCB=30 V , IE=0 VEB= 5V , IC=0 VCE= 1V, IC= 100mA VCE=1V, IC= 700mA MIN 30 25 5 110 50 Collector-emitter saturation voltage Base-emitter voltage EJTransition frequency VCE(sat) * VBE(on) * fT IC=700 mA, IB= 70mA VCE=6V, IC=10mA VCE= 6V...


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