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BCW30

CDIL
Part Number BCW30
Manufacturer CDIL
Description SILICON PLANAR EPITAXIAL TRANSISTORS
Published Jul 18, 2017
Detailed Description Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BCW29 BCW30 SILICON PLANAR ...
Datasheet PDF File BCW30 PDF File

BCW30
BCW30

Overview
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW29 = C1 BCW30 = C2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS D.
C.
current gain at Tj = 25 °C –IC = 2 mA; –VCE = 5 V Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature Transition frequency at f = 35 MHz –IC = 10 mA; –VCE = 5 V Noise figure at RS = 2 kW –Ic = 200 mA; –VCE = 5 V; f = 1 kHz; B = 200 Hz hFE –VCB0 –VCE0 –ICM Ptot Tj BCW29 > 120 < 260 max.
max.
max.
max, max.
BCW30 215 500 32 V 32 V 200 mA 250 mW 150 ° C fT typ.
150 MHz F< 10 dB Continental Device India Limited Data Sheet Page 1 of 3 BCW29 BCW30 RATINGS (at TA = 25°C unless otherwise specified) Limiting value...


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