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BCW29

Part Number	BCW29
Manufacturer	NXP
Description	PNP general purpose transistors
Published	Mar 23, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCW29; BCW30 PNP general purpose transistors Product speciﬁc...
Datasheet	BCW29 PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCW29; BCW30 PNP general purpose transistors Product speciﬁcation Supersedes data of 1997 Sep 03 1999 Apr 13 Philips Semiconductors Product speciﬁcation PNP general purpose transistors FEATURES • Low current (max.
100 mA) • Low voltage (max.
32 V).
APPLICATIONS • General purpose switching and amplification.
DESCRIPTION PNP transistor in a SOT23 plastic package.
NPN complements: BCW31 and BCW32.
MARKING TYPE NUMBER BCW29 BCW30 Note 1.
∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
MARKING CODE(1) C1∗ C2∗ Top view handbook, halfpage BCW29; BCW30 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 2 MAM256 Fig.
1 Simplified outline SOT23 and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base; IC = −2 mA open collector − − − − − − − −65 − −65 MIN.
MAX.
−32 −32 −5 −100 −200 −200 250 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 13 2 Philips Semiconductors Product speciﬁcation PNP general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS Tj = 25 °C unless otherwise speciﬁed.
SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain BCW29 BCW30 DC current gain BCW29 BCW30 VCEsat VBEsat VBE Cc fT F collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector capacitance transition frequency noise ﬁgure IC = −10 mA; IB = −0.
5 mA IC = −50 mA; IB = −2.
5 mA IC = −10 mA; IB = −0.
5 mA IC = −50 mA; IB = −2.
5 mA IC = −2 mA; VCE = −5 V IE = ie = 0; VCB = −10 V...

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