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BCW30

STMicroelectronics
Part Number BCW30
Manufacturer STMicroelectronics
Description SMALL SIGNAL PNP TRANSISTORS
Published Mar 23, 2005
Detailed Description BCW30 SMALL SIGNAL PNP TRANSISTORS Type BCW 30 s Marking C2 s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE P...
Datasheet PDF File BCW30 PDF File

BCW30
BCW30

Overview
BCW30 SMALL SIGNAL PNP TRANSISTORS Type BCW 30 s Marking C2 s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AUDIO AMPLIFICATION AND SWITCHING 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V CBO V EBO IC I CM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Collector-Base Voltage (IE = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Dissipation at T c = 25 C St orage Temperature Max.
Operating Junction Temperature o Value -32 -32 -32 -5 -0.
1 -0.
2 300 -65 to 150 150 Unit V V V V A A mW o o C C 1/4 October 1997 BCW30 THERMAL DATA R t hj- amb • Thermal Resistance Junction-Ambient Max 420 o C/W • Mounted on a ceramic substrate area = 10 x 8 x 0.
6 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CB = -30 V V CB = -30 V I C = -10 µ A T j = 100 C -32 o Min.
Typ .
Max.
-100 -10 Un it nA µA V V (BR)CES ∗ Collector-Emitter Breakdown Voltage (V BE = 0) V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage Base-Emitter O n Voltage DC Current G ain Transition F requency Collector Base Capacitance Noise Figure I C = -2 mA -32 V I C = -10 µ A -32 V I C = -10 µ A -5 V V CE(sat )∗ V BE(s at)∗ V BE(on) ∗ h FE∗ fT C CB NF I C = -10 mA I C = -50 mA I C = -10 mA I C = -50 mA I C = -2 mA I C = -10 µ A I C = -2 mA IE = 0 IB = -0.
5 mA IB = -2.
5 mA IB = -0.
5 mA IB = -2.
5 mA VCE = -5 V V CE = -5 V V CE = -5 V f = 1MHz f = 1KHz -0.
6 -0.
3 -0.
18 -0.
72 -0.
81 -0.
75 150 215 150 7 10 500 V V V V V I C = -10 mA V CE = -5 V f = 100 MHz VCB = -10 V MHz dB dB I C = -0.
2mA ∆ f = 200 Hz V CE...


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