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K6R4008C1D

Part Number	K6R4008C1D
Manufacturer	Samsung semiconductor
Description	512K x8 Bit High Speed Static RAM
Published	Jul 18, 2017
Detailed Description	K6R4008C1D Document Title 512Kx8 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temper...
Datasheet	K6R4008C1D PDF File

Overview

K6R4008C1D Document Title 512Kx8 Bit High Speed Static RAM(5.
0V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History PRELIMINARY CMOS SRAM RevNo.
Rev.
0.
0 Rev.
0.
1 History Initial release with Preliminary.
Change Icc.
Isb and Isb1 Item 10ns ICC(Commercial) 12ns 15ns 10ns ICC(Industrial) 12ns 15ns ISB ISB1(Normal) Previous 90mA 80mA 70mA 115mA 100mA 85mA 30mA 10mA Current 65mA 55mA 45mA 85mA 75mA 65mA 20mA 5mA Rev.
0.
2 Rev.
0.
3 1.
Correct AC parameters : Read & Write Cycle 2.
Corrrect Power part : Delete "P-Industrial,Low Power" part 3.
Delete Data Retention Characteristics 1.
Delete 15ns speed bin.
2.
Change Icc for Industrial mode.
Item ICC(Industrial) 10ns 12ns Previous 85mA 75mA Current 75mA 65mA Rev.
1.
0 Rev.
2.
0 1.
Final datasheet release.
2.
Delete 12ns speed bin.
3.
Delete UB,LB releated AC characteristics and timing diagram.
4.
Correct Read Cycle time waveform(2).
1.
Add the Lead Free Package type.
Draft Data Septemb...

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