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2N6032

Part Number	2N6032
Manufacturer	Microsemi
Description	NPN POWER SILICON TRANSISTOR
Published	Aug 1, 2017
Detailed Description	NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/528 Devices 2N6032 2N6033 TECHNICAL DATA Qualified Level JAN...
Datasheet	2N6032 PDF File

Overview

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/528 Devices 2N6032 2N6033 TECHNICAL DATA Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6032 2N6033 Collector-Emitter Voltage Collector-Base Voltage Collector Current Emitter-Base Voltage Base Current Total Power Dissipation @ TC = +250C (1) VCEO VCBO IC VEBO IB PT 90 120 120 150 50 40 7.
0 10 140 Operating & Storage Temperature Range THERMAL CHARACTERISTICS Top, Tstg -65 to +200 Characteristics Symbol Max.
Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly 800 mW/0C between TC = 250C and TC = 2000C 1.
25 ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc 2N6032 2N6033 V(BR)CEO Collector-Emitter Breakdown Voltage IC = 200 mAdc 2N6032 2N6033 V(BR)CER Collector-Emitter Breakdown Voltage IC = 200 mAdc, VEB = 1.
5 Vdc 2N6032 2N6033 V(BR)CEX Collector-Base Cutoff Current V...

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