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2N5089

Part Number	2N5089
Manufacturer	Samsung
Description	NPN EPITAXIAL SILICON TRANSISTOR
Published	Aug 8, 2017
Detailed Description	2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO= 2N5088: 30V 2N508...
Datasheet	2N5089 PDF File

Overview

2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO= 2N5088: 30V 2N5089: 25V • Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature :2N5088 2N5089 :2N5088 2N5089 VCBO VCEO VEBO IC PC TJ TSTG 30 30 25 4.
5 50 625 150 -55 ~ 150 Unit V V V V mA m&&W TO-92 1.
Emitter 2.
Base 3.
Collector ELECTRICAL CHARACTERISTICS (TA=25 ) Characteristic Symbol Collector-Base Breakdown Voltage :2N5088 %Collector-Emitter Breakdown :2N5089 Voltage :2N...

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