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2N5003

Semicoa Semiconductor
Part Number 2N5003
Manufacturer Semicoa Semiconductor
Description PNP Transistor
Published Mar 23, 2005
Detailed Description Data Sheet No. 2N5003 Type 2N5003 Geometry 9702 Polarity PNP Qual Level: JAN - JANTXV Features: • • • • Silicon power t...
Datasheet PDF File 2N5003 PDF File

2N5003
2N5003

Overview
Data Sheet No.
2N5003 Type 2N5003 Geometry 9702 Polarity PNP Qual Level: JAN - JANTXV Features: • • • • Silicon power transistor for use in high speed power switching applications.
Housed in a TO-59 case.
Also available in chip form using the 9702 chip geometry.
The Min and Max limits shown are per MIL-PRF-19500/512 which Semicoa meets in all cases.
Generic Part Number: 2N5003 REF: MIL-PRF-19500/512 TO-59 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Collector Current, PW < 8.
3 ms, < 1% duty cycle Power Disipation TA = 25oC ambient Derate above 25oC Power Disipation TC = 25oC ambient o Derate above 25 C Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC IC PT PT TJ TSTG Rating 80 100 5.
5 10 15 2 11.
4 58 331 -55 to +200 -55 to +200 Unit V V V A A Watt mW/oC Watt o mW/ C o C C o Data Sheet No.
2N5003 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Thermal Impedance Collector-Emitter Breakdown Voltage IC = 100 mA, IB = 0, pulsed Collector-Emitter Cutoff Current VCE = 40 V, VBE = 0, Bias Condition D VCE = 60 V, VBE = 0, Bias Condition C VCE = 100 V, VBE = 0, Bias Condition C Collector-Emitter Cutoff Current VCE = 60 V, VBE = +2.
0 V, TC = 150oC Base-Emitter Cutoff Current VEB = 4 V, IC = 0, Bias Condition D VEB = 5.
5 V, IC = 0, Bias Condition D Symbol V(BR)CEO ICEO ICES1 ICES2 ICEX IEBO1 IEBO2 Min 80 ------------- Max 3.
1 --50 1.
0 1.
0 500 1.
0 1.
0 Unit o C/W V µA µA mA µA µA mA ON Characteristics Forward Current Transfer Ratio IC = 50 mA, VCE = 5 V IC = 2.
5 A, VCE = 5 V, pulsed IC = 5.
0 A, VCE = 5 V, pulsed IC = 2.
5 A, VCE = 5 V pulsed, TA = -55oC Base-Emitter Voltage, Nonsaturted IC = 2.
5 V, VCE = 5 V pulsed Base-Emitter Saturation Voltage IC = 2.
5 A, IB = 250 mA, pulsed IC = 5 A, IB = 500 mA, pulsed Symbol hFE1 hFE2 hFE3 hFE4 VBE VBE(sat)1 VBE(sat)2 Min 20 30 20 15 ------- ...


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