DatasheetsPDF.com

2N5004

Semicoa Semiconductor
Part Number 2N5004
Manufacturer Semicoa Semiconductor
Description NPN Transistor
Published Mar 23, 2005
Detailed Description Data Sheet No. 2N5004 Type 2N5004 Geometry 9202 Polarity NPN Qual Level: JAN - JANTXV Features: • • • • Silicon power t...
Datasheet PDF File 2N5004 PDF File

2N5004
2N5004

Overview
Data Sheet No.
2N5004 Type 2N5004 Geometry 9202 Polarity NPN Qual Level: JAN - JANTXV Features: • • • • Silicon power transistor for use in high speed power switching applications.
Housed in a TO-59 case.
Also available in chip form using the 9202 chip geometry.
The Min and Max limits shown are per MIL-PRF-19500/534 which Semicoa meets in all cases.
Generic Part Number: 2N5004 REF: MIL-PRF-19500/534 TO-59 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Collector Current, PW < 8.
3 ms, < 1% duty cycle Power Disipation TA = 25oC ambient Derate above 25oC Reverse Pulse Energy Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC IC PT Rating 80 100 5.
5 5 10 2 11.
4 15 Unit V V V A A Watt mW/oC mJ o TJ TSTG -65 to +200 -65 to +200 C C o Data Sheet No.
2N5004 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Collector-Base Breakdown Voltage IC = 100 mA, IB = 0, pulsed Emitter-Base Cutoff Current VEB = 4 V, IC = 0 VEB = 5.
5 V, IC = 0 Collector-Emitter Cutoff Current VCE = 60 V, VBE = 0 VCE = 100 V, VBE = 0 VCE = 40 V, IB = 0 VCE = 60 V, VBE = -2.
0 V, TC = +150oC Symbol V(BR)CBO IEBO1 IEBO2 ICES1 ICES2 ICEO ICEX Min 80 ------------- Max --1.
0 1.
0 1.
0 1.
0 50 500 Unit V µA mA µA mA µA µA ON Characteristics Thermal Impedance Forward Current Transfer Ratio IC = 50 mA, VCE = 5 V IC = 2.
5 A, VCE = 5 V, pulsed IC = 5.
0 A, VCE = 5 V, pulsed IC = 2.
55 A, VCE = 5 V pulsed, TC = -55oC Base-Emitter Voltage, Nonsaturted VCE = 5 V, IC = 2.
5 V pulsed Base-Emitter Saturation Voltage IC = 2.
5 A, IB = 250 mA, pulsed IC = 5 A, IB = 500 mA, pulsed Symbol hFE1 hFE2 hFE3 hFE4 VBE VBE(sat)1 VBE(sat)2 Min 50 70 40 25 ------- Max 3.
1 --200 ----1.
45 1.
45 2.
2 Unit o C/W --------- V dc V dc V dc Small Signal Characteristics Magnitude of Common Emitter Small Signal Short Circuit Forward Current Transfer Ratio...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)