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2SB1240

Part Number	2SB1240
Manufacturer	GME
Description	Medium Power Transistor
Published	Aug 18, 2017
Detailed Description	Medium Power Transistor FEATURES z Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) z Complements the 2SD1862. APPLIC...
Datasheet	2SB1240 PDF File

Overview

Medium Power Transistor FEATURES z Low VCE(sat).
VCE(sat)=-0.
5V(Typ)(IC/IB=-2A/-0.
2A) z Complements the 2SD1862.
APPLICATIONS z Epitaxial planar type.
z PNP silicon transistor.
Pb Lead-free Production specification 2SB1240 TO-251 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -2 A ICP Collector Power Dissipation -3 A PC Collector Power Dissipation 1.
0 W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V038 Rev.
A www.
gmicroelec.
com 1 Production specification Medium Powe...

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