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PMV50XP

nexperia
Part Number PMV50XP
Manufacturer nexperia
Description P-channel Trench MOSFET
Published Sep 11, 2017
Detailed Description PMV50XP 20 V, P-channel Trench MOSFET 19 November 2014 Product data sheet 1. General description P-channel enhancement...
Datasheet PDF File PMV50XP PDF File

PMV50XP
PMV50XP

Overview
PMV50XP 20 V, P-channel Trench MOSFET 19 November 2014 Product data sheet 1.
General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Low threshold voltage • Low on-state resistance • Trench MOSFET technology • Enhanced power dissipation capability of 1096 mW 3.
Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -12 -...


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