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S10H06S

SI-TECH
Part Number S10H06S
Manufacturer SI-TECH
Description N-Channel MOSFET
Published Sep 23, 2017
Detailed Description SI-TECH SEMICONDUCTOR CO.,LTD S10H06R/S N-Channel MOSFET Features █ 100V,60A,Rds(on)(typ)=15mΩ @Vgs=10V █ High Ruggedn...
Datasheet PDF File S10H06S PDF File

S10H06S
S10H06S

Overview
SI-TECH SEMICONDUCTOR CO.
,LTD S10H06R/S N-Channel MOSFET Features █ 100V,60A,Rds(on)(typ)=15mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Avalanche Tested █ Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products.
Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGS EAS PD TJ TSTG Drain-Source Voltage Continuous Drain Current (TC=25 ℃) Continuous Drain Current (TC=100℃) Pulsed Drain Current (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Maximum Power Dissipation (TC=25 ℃) Derating Factor above 25℃ Operating Junction Temperature Range Storage Temperature Rang...


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