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BY550-600

EIC discrete Semiconductors
Part Number BY550-600
Manufacturer EIC discrete Semiconductors
Description SILICON RECTIFIER DIODES
Published Mar 23, 2005
Detailed Description BY550-50 ~ BY550-1000 PRV : 50 - 1000 Volts Io : 5.0 Amperes FEATURES : * * * * * High current capability High surge cur...
Datasheet PDF File BY550-600 PDF File

BY550-600
BY550-600

Overview
BY550-50 ~ BY550-1000 PRV : 50 - 1000 Volts Io : 5.
0 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop SILICON RECTIFIER DIODES DO - 201AD 0.
21 (5.
33) 0.
19 (4.
83) 1.
00 (25.
4) MIN.
0.
375 (9.
53) 0.
285 (7.
24) MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 1.
21 grams 0.
052 (1.
32) 0.
048 (1.
22) 1.
00 (25.
4) MIN.
Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.
375"(9.
5mm) Lead Length Ta = 60°C Peak Forward Surge Current 8.
3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 5.
0 Amps.
Maximum DC Reverse Current at rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL VRRM VRMS VDC IF BY550 BY550 BY550 BY550 BY550 BY550 BY550 - 50 - 100 - 200 - 400 - 600 - 800 - 1000 UNIT Volts Volts Volts Amps.
50 35 50 100 70 100 200 140 200 400 280 400 5.
0 600 420 600 800 560 800 1000 700 1000 IFSM VF IR IR(H) CJ RθJA TJ TSTG 300 0.
95 20 50 50 18 - 65 to + 175 - 65 to + 175 Amps.
Volts µA µA pF °C/W °C °C Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Junction Temperature Range Storage Temperature Range Notes : (1) Measured at 1.
0 MHz and applied reverse voltage of 4.
0V DC (2) Thermal resistance from Junction to Ambient at 0.
375" (9.
5mm) Lead Lengths, P.
C.
Board Mounted.
UPDATE : MAY 27, 1998 RATING AND CHARACTERISTIC CURVES ( BY550-50 - BY550-1000 ) AVERAGE FORWARD OUTPUT CUR...


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