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BYC10-600CT

NXP
Part Number BYC10-600CT
Manufacturer NXP
Description Dual rectifier diode
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BYC10-600CT Dual rectifier diode ultrafast, low switching loss Product specificatio...
Datasheet PDF File BYC10-600CT PDF File

BYC10-600CT
BYC10-600CT

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BYC10-600CT Dual rectifier diode ultrafast, low switching loss Product specification March 2001 NXP Semiconductors Rectifier diode ultrafast, low switching loss Product specification BYC10-600CT FEATURES • Dual diode • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET SYMBOL a1 a2 13 k2 QUICK REFERENCE DATA VR = 600 V VF ≤ 1.
75 V IO(AV) = 10 A trr = 19 ns (typ) APPLICATIONS • Active power factor correction • Half-bridge lighting ballasts • Half-bridge/ full-bridge switched mode power supplies.
The BYC10-600CT is supplied in the SOT78 (TO220AB) conventional leaded package.
PINNING PIN DESCRIPTION 1 anode 1 2 cathode 3 anode 2 tab cathode SOT78 (TO220AB) tab 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS VRRM VRWM VR IO(AV) IFRM IFSM Tstg Tj Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Storage temperature Operating junction temperature Tmb ≤ 110 ˚C δ= Tmb 0.
5; with ≤ 50 ˚C1 reapplied VRRM(max); δ= Tmb 0.
5; with ≤ 50 ˚C1 reapplied VRRM(max); t = 10 ms t = 8.
3 ms sinusoidal; Tj = 150˚C prior to surge with reapplied VRWM(max) MIN.
- - - -40 - MAX.
600 600 500 10 10 40 44 UNIT V V V A A A A 150 ˚C 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes in free air.
MIN.
- TYP.
60 MAX.
2.
5 2.
2 - UNIT K/W K/W K/W 1 Tmb(max) limited by thermal runaway March 2001 1 Rev 1.
200 1;3 Semiconductors Rectifier diode ultrafast, low switching loss Product specification BYC10-600CT ELECTRICAL CHARACTERISTICS Tj = 25 ˚C, per diode unless otherwise stated ...


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