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BYC10-600P


Part Number BYC10-600P
Manufacturer NXP
Title Hyperfast power diode
Description Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package. 2. Features and benefits • Fast switching • Low leakage current • Low reverse...
Features and benefits
• Fast switching
• Low leakage current
• Low reverse recovery current
• Low thermal resistance
• Reduces switching losses in associated MOSFET or IGBT 3. Applications
• Active PFC in air conditioner
• High frequency switched-mode power supplies
• Continuous Current Mode (CCM) Power Fac...

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BYC10-600 : Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package 2. Features and benefits • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET 3. Applications • Continuous Current Mode (CCM) Power Factor Correction (PFC) • Half-bridge/full-bridge switched-mode power supplies • Half-bridge lighting ballasts 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5 ; Tmb ≤ 78 °C; square-wave pulse; Fig. 1; Fig. 2 Static characteristics VF forward voltage IF = 10 A; Tj = 150 °C; Fig. 4 Dynamic charact.

BYC10-600CT : 1 anode 1 2 cathode 3 anode 2 tab cathode SOT78 (TO220AB) tab 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS VRRM VRWM VR IO(AV) IFRM IFSM Tstg Tj Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Storage temperature Operating junction temperature Tmb ≤ 110 ˚C δ= Tmb 0.5; with ≤ 50 ˚C1 reapplied VRRM(max); δ= Tmb 0.5; with ≤ 50 ˚C1 reapplied VRRM(max); t = 10 ms t = 8.3 ms sinusoidal; Tj = 150˚C prior to surge with reapplied V.




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