DatasheetsPDF.com

BYV52PI

STMicroelectronics
Part Number BYV52PI
Manufacturer STMicroelectronics
Description HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
Published Mar 23, 2005
Detailed Description ® BYV52/PI HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE ...
Datasheet PDF File BYV52PI PDF File

BYV52PI
BYV52PI

Overview
® BYV52/PI HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION TOP3I : Insulating voltage = 2500 V DC Capacitance = 12 pF A1 K A2 DESCRIPTION Dual center tap rectifier suited for switchmode power supply and high frequency DC to DC converters.
Packaged in SOT93, or TOP3I this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.
SOT93 (Plastic) BYV52-200 isolated TOP3I (Plastic) BYV52PI-200 ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) IF(AV) RMS forward current Average forward current SOT93 δ = 0.
5 TOP3I Surge non repetitive forward current Storage and junction temperature range Tc=110°C Tc=90°C tp=10ms sinusoidal Parameter Per diode Per diode Per diode Per diode Value 50 30 30 500 - 40 to + 150 - 40 to + 150 Unit A A IFSM Tstg Tj A °C °C Symbol VRRM Parameter Repetitive peak reverse voltage Value 200 Unit V October 1999 Ed : 2C 1/6 BYV52/PI THERMAL RESISTANCE Symbol Rth (j-c) Junction to case Parameter SOT93 Per diode Total TOP3I Per diode Total Value 1.
2 0.
75 1.
8 1.
2 0.
3 0.
6 Unit °C/W Rth (c) Coupling SOT93 TOP3I °C/W When the diodes 1 and 2 are used simultaneously : Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) ELECTRICAL CHARACTERISTICS (Per diode) STATIC CHARACTERISTICS Symbol IR * Tj = 25°C Tj = 100°C VF ** Tj = 125°C Tj = 125°C Tj = 25°C IF = 20 A IF = 40 A IF = 40 A Test Conditions VR = VRRM Min.
Typ.
Max.
25 2.
5 0.
85 1.
00 1.
15 Unit µA mA V Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 µs, duty cycle < 2 % To evaluate the conduction losses use the following equation : P = 0.
7 x IF(AV) + 0.
0075 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Tj = 25°C Test Conditions IF = 0.
5A IR = 1A IF = 1A VR = 30V tfr Tj = 25°C Tj = 25°C IF = 1A VFR = 1.
1 x VF IF = 1A Irr = 0.
25A Min.
Typ.
Max.
35 U...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)